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SpinSim: A Computer Architecture-Level Variation Aware STT-MRAM Performance Evaluation Framework

机译:SPINSIM:计算机架构级别变体识别STT-MRAM性能评估框架

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With low power consumption, fast access speed, high scalability and infinite endurance, spin-transfer torque magne-toresistive random access memory (STT-MRAM) is considered as one of the most promising alternatives to SRAM. However, The performance of STT-MRAM is significantly influenced by several reliability issues, such as process variations and stochastic switching. Most of the reliability analysis of relative circuits are performed at bit-cell and memory level, while that at computer- system level is missing. This paper proposes an efficient frame- work for performance evaluation of STT-MRAM on computer architecture-level implemented by GEM5+NVMain co-simulator in consideration of the reliability issues. The results show that the overall average latency and energy of STT-MRAM can be up to 5.996% and 20.65% larger than that of the nominal cases in a computer system-level memory architecture taking reliability issues into account. Because reliability issues are considered during the design phase, our framework can provide more accurate performance evaluation and contribute to a higher yield of STT-MRAM based computer systems.
机译:功耗低,快速接入速度,高可扩展性和无限耐久性,旋转转移扭矩Magne-Toresistive随机存取存储器(STT-MRAM)被认为是最有前途的SRAM替代品之一。然而,STT-MRAM的性能受到若干可靠性问题的显着影响,例如工艺变化和随机切换。相对电路的大多数可靠性分析在位单元和内存级别执行,而在计算机系统级别缺失。本文提出了一种有效的框架,用于考虑到可靠性问题,在GEM5 + NVMAIN CO-SIMULIDATOR实施的计算机架构水平上进行STT-MRAM的绩效评估。结果表明,STT-MRAM的总体平均水平和能量高于计算机系统级内存架构中的标称案例的5.996%和20.65%,考虑到可靠性问题。由于在设计阶段考虑了可靠性问题,因此我们的框架可以提供更准确的绩效评估,并有助于更高的基于STT-MRAM的计算机系统的产量。

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