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Bias Temperature Stress (BTS) induced ESD device's leakage issue and Its preventing solutions in smart power technology

机译:偏置温度应力(BTS)引起的ESD器件的泄漏问题及其智能电源技术中的预防解决方案

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摘要

A leakage issue induced by Bias Temperature Stress (BTS) is found in a NPN-based ESD clamp. BTS (1.1*Vdd, 125C, 8hrs) can cause an accumulation of drifted ions at an/the STI interface which leads to increased leakage and eventual device failure. TCAD simulation and activation energy extraction model are used to explain the mechanism and two solutions are proposed.
机译:在基于NPN的ESD钳位中发现了由偏置温度应力(BTS)引起的泄漏问题。 BTS(1.1 * Vdd,125C,8hrs)可能导致STI界面处的离子积聚,从而导致泄漏增加并最终导致设备故障。用TCAD仿真和活化能提取模型解释了机理,并提出了两种解决方案。

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