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Phonon-assisted secondary emission from a semiconductor quantum dot in the regime of vibrational resonance

机译:振动共振中声子辅助半导体量子点的二次发射

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We develop a low-temperature theory of the resonant Raman scattering from a semiconductor quantum dot, whose electronic subsystem is resonant with the confined longitudinal-optical (LO) phonon modes. Our theory employs a generalized model for the quantum dot's energy spectrum renormalization, which is induced by the polar electron-phonon interaction. The model takes into account the degeneration of electronic states and allows for arbitrary LO-phonon modes to be involved in the vibrational resonance. We solve the generalized master equation for the reduced density matrix, in order to derive an analytical expression for the differential cross section of the resonant Raman scattering from a single quantum dot.
机译:我们开发了一种从半导体量子点共振拉曼散射的低温理论,该量子点的电子子系统与受限的纵向光学(LO)声子模共振。我们的理论对量子点的能谱重新归一化采用了广义模型,该归一化是由极性电子-声子相互作用引起的。该模型考虑了电子状态的退化,并允许任意LO声子模式参与振动共振。我们为简化的密度矩阵求解广义主方程,以便从单个量子点得出共振拉曼散射的微分截面的解析表达式。

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