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The study of TiN residues formation mechanism and removal solution on bondpad surface in PI/PA mask combined process

机译:PI / PA掩模组合过程中粘结剂表面锡残留物机理及去除溶液的研究

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In PI/PA mask combined process, the problem of TiN residues on bondpad surface is often encountered. To obtain TiN residues free bondpad, the top metal sputtering recipe splits were done. The bondpad TiN residues formation mechanism was analyzed, finding that the alloy process location change produced TiAl3 and then induced the TiN residues issue after PI/PA etching. The Ti/TiN/Al/TiN top metal film stack can get clear bondpad surface, but it would bring in crown defect after top metal etching. Optimized the top metal sputtering recipe to the film stack of Ti/TiN/Al/TiN/Ti /TiN, the TiAl3 formation was prevented and the bondpad TiN residues can be fixed, meanwhile the crown defect issue resulted from TiN cracking was resolved.
机译:在PI / PA掩模组合过程中,通常遇到键盘表面上的锡残留物问题。为了获得锡残留物游离键合剂,完成顶部金属溅射配方分裂。分析键合锡残基形成机制,发现合金工艺定位改变产生TiAl 3 ,然后在PI / PA蚀刻后引起锡残基问题。 Ti / TiN / Al / TiN顶部金属薄膜叠层可以清除粘合剂表面,但它将在顶部金属蚀刻后引入冠状缺陷。优化了Ti / TiN / Al / TiN / TiN的薄膜叠层的顶部金属溅射配方,防止了TiAl 3 形成,并且可以固定键合锡残留物,同时冠状缺陷问题由锡裂解产生的结果得到了解决。

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