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A method to solve Reverse Tunneling Disturb issue for SuperFlash? memory

机译:解决Superflash求解反向隧道扰动问题的方法?记忆

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Oxygen gas is conventionally used for photoresist ashing process during the fabrication of Integrated Circuits. However, Reverse tunneling disturb fail of flash memory happened frequently if we only use Oxygen gas during photoresist ashing process after floating gate nitride etch. Through physical failure analysis, we found it is reverse word line tip that induce RTD fail. By analysis and comparison, an additional forming gas (N2H2) that can enhance polymer removal during Photo resist ashing process was introduced to solve RTD fail for flash products.
机译:氧气通常用于在集成电路的制造过程中用于光致抗蚀剂灰化过程。然而,如果我们在浮栅氮化物蚀刻之后仅在光刻胶灰化过程中使用氧气,则反向隧穿干扰频繁发生频繁发生。通过物理失败分析,我们发现它是凸起RTD失败的反向字线提示。通过分析和比较,引入了可以增强光抗蚀剂灰化过程中聚合物去除的另外的形成气体(N2H2)以解决闪存产品的RTD失效。

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