Effect of Oxone and Peroxodisulphates on the Chemical Mechanical Polishing Efficiency of C-Plane GaN

摘要

Because of the high hardness and chemical inertia, GaN is difficult to be processed. Chemical mechanical polishing (CMP) is one of ultra-precision processing methods to achieve atomic-scale smooth surface, but it still has low efficiency for GaN process. Finding effective oxidants to oxidize GaN is an appropriate method to obtain high material removal rate (MRR) in CMP process. In this paper, potassium peroxodisulfate (K2S2O8), ammonium peroxodisulfate ((NH4)2S2O8) and Oxone(KHSO5) were used to research their effect on GaN CMP efficiency in SiO2-based slurry, respectively. The results showed that peroxodisulphates and Oxone can significantly improve the MRR.