Synthesis of Mos2/ws2Vertical Heterostructure and Its Photoelectric Properties

摘要

Two-dimensional (2D) heterostructures based on transition metal dichalcogenides have sparked significant attention due to their excellent electrical and optical properties. However, synthesis of heterojunction is still a challenge. In this work, Mos2/ws2vertical heterostructure was achieved on SiO2/Si substrate via transferring CVD-grown Mos2 onto WS2. The morphology and structure properties of the Mos2/ws2heterostructure were characterized by optical microscope (OM), atomic force microscope (AFM), scanning electron microscope (SEM), Raman spectroscopy. Compared with individual Mos2 or WS2, the slight offset of the Raman peaks in the Mos2/ws2heterostructure was observed, which implies the charge transfer of the heterojunction. A photodetector based on Mos2/ws2heterostructure was fabricated with a channel length of 2μm. High on/off ratio (>10^{7) and electron mobility of 10 cm2V−1S−1 of the photodetector were achieved. This work plays an active role in the development of photoelectronic devices based on 2D heterostructures.}