Investigation of FDSOI Raised S/D Formation

摘要

In this paper, the formation of FDSOI raised source/drain (RSD) will be presented targeting for 22nm node technology. The source and drain are formed by epitaxial growth of Si or SiGe from SOI layer for NMOS or PMOS respectively. During the fabrication process, there are two major concerns regarding to the RSD formation --- the remained SOI acts as the seed for epitaxial growth, the epitaxy growth method will influence the performance of the device. In this work, we will discuss experimentally from three aspects in order to obtain sufficient SOI remain, and will propose two SiGe epitaxial schemes in order to attain uniform epitaxial profile. Advantages and disadvantages of each scheme will be investigated.