Analysis of Top and Bottom Contact Organic Transistor Performance for Different Technology Nodes

摘要

This research paper analyzes the performance of organic thin film transistor (OTFT) for two typical structures, viz., bottom gate top contact (BGTC) and bottom gate bottom contact (BGBC). The analysis is carried out for channel length (L) from 5 to 50 µm. A significant reduction in drain current for top contact is observed, however, it remains constant for the bottom contact device. Transconductance of the top contact device falls about 50% from 5 to 10 µm L, however, for bottom contact only 1% reduction is observed. Besides this, mobility in top contact is almost constant, whereas in bottom contact, mobility increases with larger channel lengths. Furthermore, total resistance decreases with higher gate bias, due to increase in carrier density within a channel and near contacts for both devices.