100GHz depletion-mode Ga2O3/GaN single nanowire MOSFET by photo-enhanced chemical oxidation method

摘要

We reported transport characterization on [112̄0]GaN single nanowire (SNW)-MOSFET laterally- and directionally-grown on (0001) sapphire substrates. The 60nm-dia. Ga2O3/GaN SNW-MOSFET of 0.1µm gate length was shown to exhibit a saturation current of 160µA, current on/off ratio of 105, swing of 85mV/dec, transconductance of 85µS, and unity current gain bandwidth ft at 95GHz. From a 3D diffusion and drift model analysis, it is shown that a polarization induced 2D electron gas (2DEG) density of 7×1012 cm2 with mobility of 1000cm2/V-sec confined at the interface of semi-polar {11̄01̄} GaN/Ga2O3 was responsible for the high-speed transport characteristics.