Oxygen plasma annealing was used to crystallise (BiDy)3(FeGa)5O12 (Bi:DyIG) at a temperature of 515°C, which is over 100°C lower compared with conventional thermal annealing. We used a thermal imager to measure and characterise the temperature of the sample with respect to RF power and pressure inside a plasma chamber.
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机译:氧等离子体退火用于在515°C的温度下结晶(BiDy) 3 inf>(FeGa) 5 inf> O 12 inf>(Bi:DyIG) ,与传统的热退火相比,降低了100°C以上。我们使用热成像仪来测量和表征样品相对于等离子体室内的RF功率和压力的温度。
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