Few-layered graphene growth by carbon implantation into polycrystalline nickel substrate

摘要

Carbon ions were implanted into nickel films to facilitate growth of few-layered graphene. After vacuum annealing at 950 °C, G and 2D peaks were seen in micro-Raman measurements of the nickel film. No D peak, which is associated with sp³ adsorbates and vacancies/defects in graphene, was observed.