NITROGEN DOPED ZnO (ZnO:N) THIN FILMS DEPOSITED BY REACTIVE RF MAGNETRON SPUTTERING FOR PEC APPLICATIONS

摘要

ZnO:N films were deposited by reactive RF magnetron sputtering on F-doped tin oxide coated glass substrates in mixed N_2 and O_2 gas ambient. Their PEC properties were measured and compared with those of as-deposited and annealed ZnO films. The ZnO:N films exhibit photoresponse in the visible-light region, yielding higher total photocurrents than ZnO thin films. ZnO:N thin films with reduced bandgaps were synthesized by reactive RF magnetron sputtering using ZnO target at 100°C followed by post deposition annealing at 500°C in air for 2 h. ZnO:N thin films showed enhanced N incorporation and shift of the optical absorption into the visible light regions. As a result, ZnO:N films showed improved PEC response, compared to ZnO thin films