Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY, USA;
Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY, USA;
Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY, USA;
Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY, USA;
Zinc oxide; II-VI semiconductor materials; Films; Silicon; Conductivity; Absorption; Argon;
机译:射频磁控溅射法在Al203(0001)衬底上沉积高Ga掺杂的ZnO薄膜的外延生长和表征
机译:<![CDATA [在UV中的发光光谱和发射强度的发射强度<强调型=“斜体”> n 重点> -ZnO / <重点类型=“斜体”> P Emphasis> - GaN和<重点类型=“斜体”> n 重点> -zno / <强调类型=“斜体”>通过高频磁控溅射沉积Zno薄膜时的P Emphasis> -Zno结构]]>
机译:溅射压力对射频磁控溅射动态沉积铝掺杂ZnO薄膜性能的影响
机译:RF磁控溅射沉积N型Si掺杂ZnO和ZnO薄膜的表征
机译:使用不平衡磁控溅射制造适用于薄膜晶体管的掺镓ZNO薄膜。
机译:射频磁控溅射制备(MgAl)共掺杂ZnO薄膜的光电性能研究与研究
机译:RF磁控溅射沉积Cu掺杂ZnO薄膜的结构和光学表征