EFFECTS OF PULSED MAGNETIC ANNEALING ON THE GRAIN BOUNDARY OF PRIMARY RECRYSTALLIZED MICROSTRUCTURE IN THE GRAIN-ORIENTED SILICON STEEL

摘要

In this work, the effects of pulsed magnetic field applied during the annealing of grain-oriented silicon steel on the grain boundaries in the primary recrystallizated microstructure were investigated. Samples of cold rolled grain-oriented silicon steel were annealed under pulsed magnetic field with the maximum strength IT from three different directions-rolling direction, transverse direction and normal direction at the temperature of 700°C for 16 minutes. Electron Backscattering Scanning Diffraction (EBSD) technology was used to measure grains for texture determination, and software called Channel 5 was used to calculate the messages of boundaries. Results show that pulsed magnetic field can influence the development of grain boundaries. It is found that the frequency of the low angle boundaries increases when pulsed magnetic field is applied, especially from the rolling direction. Compared to the ordinarily annealed sample, the frequencies of CSL boundaries vary in samples annealed with pulsed magnetic field in different directions.