首页> 外国专利> PRIMARY RECRYSTALLIZATION ANNEALED SHEET FOR MANUFACTURING HIGH MAGNETIC FLUX DENSITY GRAIN-ORIENTED SILICON STEEL SHEET

PRIMARY RECRYSTALLIZATION ANNEALED SHEET FOR MANUFACTURING HIGH MAGNETIC FLUX DENSITY GRAIN-ORIENTED SILICON STEEL SHEET

机译:主重结晶退火板,用于制造高磁通密度晶粒取向硅钢片

摘要

PURPOSE: To manufacture a grain-oriented silicon steel sheet having high magnetic flux density by subjecting a high silicon steel slab to hot rolling and annealing, thereafter subjecting it to cold rolling into a thin sheet and thereafter executing decarburization annealing serving also as primary recrystallization annealing, secondary recrystallization annealing, purification annealing and stress relief annealing. ;CONSTITUTION: An Si steel stab contg. 3.0% Si is heated, is thereafter subjected to hot rolling, is successively annealed at 1150°C in a nitrogen atmosphere, is cooled and is thereafter worked into a thin sheet having a final sheet thickness by cold rolling. Next, this thin sheet is heated to 850°C in a mixed atmosphere of hydrogen and nitrogen, is subjected to decarburization annealing serving also as primary recrystallization annealing, is thereafter coated with a separation agent for annealing, is subjected to secondary recrystallization annealing at 1200°C in an Ar atmosphere and is subjected to stress relief annealing at 800°C in a nitrogen atmosphere. At this time, the extreme density N of the (110) plane to the random azimuth in the parallel face of the sheet face at 1/4 of the total sheet thickness from the surface to the central layer of the sheet thickness is regulated so as to satisfy the inequality after the primary recrystallization annealing, by that, the objective grain-oriented silicon steel sheet extremely high in magnetic flux density can stably be manufactured.;COPYRIGHT: (C)1993,JPO&Japio
机译:用途:制造具有高磁通密度的方向性硅钢片,方法是将高硅钢坯进行热轧和退火,然后将其冷轧成薄板,然后执行脱碳退火,该脱碳退火也用作初次再结晶退火,二次重结晶退火,提纯退火和应力消除退火。 ;构成:硅钢刺(续)。加热> 3.0%的Si,然后进行热轧,在氮气氛中在1150℃下连续退火,冷却,然后通过冷轧加工成最终厚度的薄片。接着,将该薄片在氢和氮的混合气氛中加热至850℃,进行脱碳退火,该脱碳退火也用作一次再结晶退火,之后,涂布分离用的退火剂,在1200下进行二次再结晶退火。于Ar气氛中,在800℃下进行,并在氮气气氛中,在800℃下进行应力消除退火。此时,从片材厚度的表面到中央层的(110)面的相对于片材表面的平行面的,相对于片材的平行面的随机方位角的极限密度N被调整为:为了满足初次再结晶退火后的不等式,可以稳定地制造出磁通密度极高的目标晶粒取向硅钢板。版权所有:(C)1993,日本特许厅&日本apio

著录项

  • 公开/公告号JPH05171370A

    专利类型

  • 公开/公告日1993-07-09

    原文格式PDF

  • 申请/专利权人 NIPPON STEEL CORP;

    申请/专利号JP19910331953

  • 发明设计人 NAKAJIMA SHOZABURO;

    申请日1991-12-16

  • 分类号C22C38/00;C21D1/26;C21D8/12;C21D9/46;

  • 国家 JP

  • 入库时间 2022-08-22 05:13:49

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号