Ultra-low Power CMOS Charge-sensitive Preamplifier

摘要

An ultra-low power complementary metal-oxidesemiconductor (CMOS) charge sensitive preamplifier has been built using a CSMC 0.5μm DPDM process to achieve the ultra-low power dissipation requirement for portable digital radiation detector. The ENC noise of 363e at OpF with a noise slope of 23(e)/pF can comply with the stringent low noise requirements. A 100mV/fC conversion gain at 20pF has been obtained. By operating the charge sensitive preamplifier works in the weak inversion region, the power dissipation is only 65.5μW (3.0V).