The influence of electrical characteristics of microwave magnetron power source on the process of plasma stripping from silicon plates surface

摘要

The results of experimental research of the dependence of the rate of photoresist films ashing from the surface of silicon plates by microwave discharge plasma of air and О2 vs. operational processing modes are presented. Plasma chemical processing had been carried out in a resonator-type plasmatron with partial filling by plasma (Vplasma ≥ 9500 cm3) of the resonant cavity volume. Experiments were carried out using, as a part of a high voltage power source, the microwave magnetron of the schemes of one-or two-half-period straightening with doubling voltage.