Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield

摘要

Solid-source chemical vapor deposition method is developed for the synthesis of crystalline GaAs NWs with high growth yield using Ni thin film as catalysts on amorphous SiO2/Si substrates. The NW growth parameters are optimized at the source temperature of 900 °C, substrate temperature of 600 °C and H2 flow rate of 100 sccm for 30 min. The obtained NWs have a narrow distribution of diameters (21.0 ± 4.0 nm), with the length exceeding 10 µm. The NWs are grown along different crystallographic directions with low defect densities observed.