4H-SiC SOI-MESFET with a step in buried oxide for improving electrical performance

摘要

This paper introduces a novel 4H-SiC SOI-MESFET with a step in buried oxide (SSOI-MESFET) for improving breakdown voltage. We investigate the improvement in device performance with two-dimensional and two-carrier device simulation. Our simulation results show that breakdown voltage of SSOI-MESFET is higher than conventional Bulk-MESFET (CB-MESFET) and conventional 4H-SiC SOI-MESFET (CSOI-MESFET). In this study we have shown that saturation current of the proposed structure is higher than CB-MESFET.