Wafer by Wafer Low Dose Rate Qualification in a Production Environment

机译：在生产环境中通过Wafer获得低剂量率合格晶圆

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We report details of a low dose rate wafer by wafer acceptance testing program proposed for Intersil RHA products, including sampling and test methods. We also discuss the design of a vault-type 60Co irradiation facility.

机译：我们通过针对Intersil RHA产品提出的晶圆接受测试计划报告了低剂量率晶圆的详细信息，包括采样和测试方法。我们还将讨论金库型60Co辐照设备的设计。

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《2011 IEEE Radiation Effects Data Workshop》|2011年|p.1-7|共7页
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van Vonno N. W.; Pearce L. G.; Northen A. L.; Touvell J. R.; Brewster J. C.; Gill J. S.; Thomson E. T.; Chesley P. J.; Schettler D.;
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中图分类无线电技术;
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1. New anode design concept of 600V thin wafer PT-IGBT with very low dose P-buffer and transparent P-emitter design concept of 600 V thin wafer PT-IGBT with very low dose P-buffer and transparent P-emitter [J] . Matsudai T., Tsukuda M., Umekawa S., IEE proceedings. Part G, Circuits, devices and systems . 2004,第3期

机译：具有低剂量P缓冲和透明P发射极的600V薄晶圆PT-IGBT的新阳极设计概念具有低剂量P缓冲和透明P发射极的600 V薄晶圆PT-IGBT的新概念
2. Median Pricing for 200 mm Production CMOS Wafers Increases at the Same Rate as 300 mm Wafers QoQ [J] . Microwave Journal . 2011,第5期

机译：200毫米生产CMOS晶圆的中位数价格以与300毫米晶圆QoQ相同的速度增长
3. Temperature Distribution and Deposition Rate on Semiconductor Wafers in Low-Pressure CVD Equipment Processing Two Wafers [J] . Watanabe T., Hirasawa S. IEEE Transactions on Semiconductor Manufacturing . 2013,第4期

机译：在低压CVD设备中处理两个晶圆的半导体晶圆上的温度分布和沉积速率
4. Wafer by Wafer Low Dose Rate Qualification in a Production Environment [C] . van Vonno N. W., Pearce L. G., Northen A. L., IEEE Radiation Effects Data Workshop . 2011

机译：晶圆通过晶圆低剂量率资格在生产环境中
5. Gallium-arsenide RF wafer qualification using RF probes. [D] . Mitchell, Bill Harris. 1988

机译：使用RF探针对砷化镓进行RF晶圆鉴定。
6. Combined Environment Simulator for Low-Dose-Rate Radiation and Partial Gravity of Moon and Mars [O] . Akihisa Takahashi, Sakuya Yamanouchi, Kazuomi Takeuchi, 2020

机译：用于低剂量速率辐射的环境模拟器和月球和火星的偏重
7. Recovery Act: Novel Kerf-Free PV Wafering that provides a low-cost approach to generate wafers from 150um to 50um in thickness [O] . Fong, Theodore E. 2013

机译：恢复法：新型无Kerf pV Wafering，提供低成本方法，可生成厚度从150um到50um的晶圆

Wafer by Wafer Low Dose Rate Qualification in a Production Environment

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