Design of a switchable high impedance surface based on single-layer doped graphene for THz application

摘要

A new switchable high impedance surface (HIS) is proposed and simulated for THz application using a singlelayer doped graphene in this paper. The effect of gate voltage on the conductivity of graphene is utilized and a proper charged impurity density is selected to provide enough variation range of the surface conductivity. The configuration of the proposed graphene-based HIS is presented and the potential fabrication procedure is also conceived in detail. Since the doped graphene shows a voltage-controlled electrical property varied from a dielectric-like material to a conductorlike one, the switchable reflection characteristic of the surface is observed from simulations.