3D TCAD simulation of advanced CMOS image sensors

摘要

This paper presents a full 3-Dimensionnal TCAD simulation methodology for advanced CMOS image sensors. In order to consider 3D process effects, full 3D TCAD process simulations have been carried out on different advanced pixels. Based upon the obtained 3D doping distributions, 3D opto-electrical device simulation results have been compared to both 2D based approaches and experimental results. Full 3D simulation results show a qualitative agreement with measurements