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Fully integrated 50 Gbit/s half-rate linear phase detector in SiGe BiCMOS

机译:在SiGe BiCMOS中完全集成的50 Gbit / s半速率线性相位检测器

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Presented is a fully integrated half-rate linear phase detector for clock and data recovery (CDR) in serial communication systems which is capable of operating up to 50 Gbit/s. Because of its half-rate architecture, the phase detector features inherent 1:2 demultiplexing. At a core supply voltage of 3.3 V and a bias voltage of 3.6 V, the total power consumption of the integrated circuit amounts to 1.22 W. Using a 0.25 µm SiGe HBT BiCMOS process, the chip core area occupies 0.88mm2.
机译:提出了一种用于串行通信系统中时钟和数据恢复(CDR)的完全集成的半速率线性相位检测器,它能够以高达50 Gbit / s的速度运行。由于其半速率架构,鉴相器具有固有的1:2解复用功能。在内核电源电压为3.3 V且偏置电压为3.6 V的情况下,集成电路的总功耗为1.22W。使用0.25 µm SiGe HBT BiCMOS工艺,芯片内核面积将占0.88mm 2 < / sup>。

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