Time and workload dependent device variability in circuit simulations

摘要

Simulations of an inverter and a 32-bit SRAM bit slice are performed based on an atomistic approach. The circuits' devices are populated with individual defects, which have realistic carrier-capture and emission behaviour. The wide distribution of defect time scales, accounts for both fast (Random Telegraph Noise - RTN) and near-permanent (Bias Temperature Instability - BTI) defects. The atomistic property of the model allows the detection of workload dependency in the delay of both circuits.