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Investigation of factors induced the non-intrinsic optical properties for water-soluble CdSe semiconductor quantum dots

机译:研究因素诱导的水溶性CdSe半导体量子点的非本征光学性质

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For the purpose of investigating the factors induced the non-band-edge excitation optical properties of water-soluble CdSe semiconductor quantum dots (QDs), the initial molar ratio of Cd and Se(or Cd/Se), the temperature of crystal nucleation and growing, the time of the growth etc. are systematically studied in the fabricated process. The properties of the as-prepared nano-particles (NPs) have been characterized by ultraviolet-visible absorption spectra (UV-Vis), photoluminescence (PL) spectroscopy, X-ray powder diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and X-ray photoelectron spectroscopy (XPS). The measured results show that it is possible to exist surface trapping, impurities and other defect energy states in the products with the non-band-edge excitation PL properties, and all the characteristics are involved with the different synthetic routes and prepared techniques.
机译:为了研究引起CdSe半导体量子点(QDs)的非带边激发光学特性的因素,Cd和Se的初始摩尔比(或Cd / Se),晶体成核温度和在加工过程中系统地研究了生长,生长时间等。通过紫外可见吸收光谱(UV-Vis),光致发光(PL)光谱,X射线粉末衍射(XRD),高分辨率透射电子显微镜( HRTEM)和X射线光电子能谱(XPS)。测量结果表明,具有非带边激发PL特性的产品中可能存在表面俘获,杂质和其他缺陷能态,并且所有特性都与不同的合成路线和制备工艺有关。

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