Oxygen precipitate nucleation behaviors have been comparatively investigated in the heavily antimony (Sb)-doped and lightly phosphorus (P)-doped Czochralski silicon (CZ-Si) wafers subjected to the high temperature anneal at 1000 °C for 16 h following the nucleation anneal at 450, 650 or 750 °C for up to 64 h. It is found that in the heavily Sb-doped CZ-Si the oxygen precipitate nucleation at 450 or 750 °C is always suppressed, while that at 650 °C is hardly suppressed in the case of sufficient length of annealing. It is believed that oxygen precipitate nucleation based on the Sb-V complexes occurs at 650 °C, whereas, this is not the case at 450 or 750 °C. Therefore, oxygen precipitate nucleation at 650 °C is enhanced in the heavily Sb-doped CZ-Si. Moreover, it can be comparable to that in the lightly P-doped CZ-Si as the annealing time is long enough.
展开▼
