IDEAL OXYGEN PRECIPITATING SILICON WAFER WITH NITROGEN/CARBON STABILIZED OXYGEN PRECIPITATE NUCLEATION CENTERS AND PROCESS FOR MAKING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a single crystal silicon wafer capable of forming a distribution having an ideal nonuniform depth of oxygen precipitate.;SOLUTION: The silicon wafer exhibits a controlled oxygen precipitation behavior, such that a denuded zone extending inward from the front surface and oxygen precipitates in the wafer bulk sufficient for intrinsic gettering purposes are ultimately formed. Specifically, prior to formation of the oxygen precipitates, the wafer bulk comprises dopant stabilized oxygen precipitate nucleation centers. The dopant is selected from among a group consisting of nitrogen and carbon and the concentration of the dopant is sufficient to allow the oxygen precipitate nucleation centers to withstand thermal processing, such as, an epitaxial deposition process, while maintaining the ability to dissolve any grown-in nucleation centers.;COPYRIGHT: (C)2010,JPO&INPIT