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Modeling of Mismatch and Across-Chip Variations in Compact Device Models

机译:紧凑型设备模型中的不匹配和跨芯片差异建模

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摘要

Pelgrom characterized device mismatch between two devicesseparated by a finite distance D_(ij) as (a~2/WL + b~2D_(ij)~2)~(1/2).While the modeling of adjacent mismatch (D_(ij)≈ 0) in compact models is straightforward, the modeling of distance-dependent mismatch (D_(ij) > 0) among several devices remains a challenge. Further, mismatch and intra-die/across-chip variations (ACV) are generally treated as two separate problems. In this paper, for the first time, we (ⅰ) link characterizations among adjacent mismatch, finite-distance mismatch, ACV, and correlation into a unified concept and description and improve Pelgrom's mismatch characterization, (ⅱ) highlight the challenges in implementing Pelgrom's distance-dependent mismatch characterization in compact models, and (ⅲ) present a set of compact solutions for modeling mismatch and ACV.
机译:Pelgrom表征了两个设备之间的设备不匹配 以有限距离D_(ij)分隔为(a〜2 / WL + b〜2D_(ij)〜2)〜(1/2)。 虽然紧凑模型中的相邻失配(D_(ij)≈0)建模很简单,但是在多个设备之间建立与距离相关的失配(D_(ij)> 0)仍然是一个挑战。此外,失配和管芯内/芯片间差异(ACV)通常被视为两个独立的问题。在本文中,我们第一次(ⅰ)将相邻失配,有限距离失配,ACV和相关性之间的表征链接到统一的概念和描述中,并改善Pelgrom的失配表征,(ⅱ)突出了实现Pelgrom距离的挑战紧凑模型中依赖依赖的失配表征,(ⅲ)提出了一套用于模型化失配和ACV的紧凑解决方案。

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