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MODELING METHOD OF DEVICE MISMATCH CHARACTERISTIC, AND EXTRACTION DEVICE OF MODEL PARAMETER
MODELING METHOD OF DEVICE MISMATCH CHARACTERISTIC, AND EXTRACTION DEVICE OF MODEL PARAMETER
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机译:设备匹配特性的建模方法及模型参数的提取设备
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摘要
PROBLEM TO BE SOLVED: To provide a modeling method of a device mismatch characteristic and an extraction device of a model parameter capable of optimizing balance between improvement of model error accuracy and shortage of a simulation time.;SOLUTION: Mismatch characteristic data in each size (width W×length L) of a MOS transistor measured by a device measuring part 10 are stored in a measured data storage part 21. A PW analysis part 22 approximates dependency of the device width W of mismatch by a power function of W, and determines a power number PW. A PL analysis part 23 approximates dependency of the device length L of the mismatch by a power function of L, and determines a power number PL. A final analysis part 24 approximates WPW×LPL dependency of device characteristic mismatch by a linear function, and determines an inclination α and a segment Voffset. A model output part 30 determines a threshold mismatch model dVth from the four parameters.;COPYRIGHT: (C)2007,JPO&INPIT
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机译:要解决的问题:提供一种设备失配特性的建模方法和一种模型参数的提取设备,能够在提高模型误差精度和缩短仿真时间之间达到最佳平衡。解决方案:每种尺寸的特性数据都不匹配(由器件测量部分10测量的MOS晶体管的宽度W×长度L)被存储在测量数据存储部分21中。PW分析部分22通过W的幂函数近似失配的器件宽度W的依赖性,并确定功率数PW。 PL分析部23通过L的幂函数来近似失配的器件长度L的依赖性,并确定功率数PL。最终分析部24通过线性函数对装置特性不匹配的W PW Sup>& L PL Sup>依赖性进行近似,求出倾斜度α。和段Voffset。模型输出部分30从四个参数确定阈值失配模型dVth。COPYRIGHT:(C)2007,JPO&INPIT
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