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Oxygen vacancies induced ferromagnetism in undoped and Cr doped SnO_2 nanowires

机译:氧空位在未掺杂和Cr掺杂的SnO_2纳米线中引起铁磁性。

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We presented detailed characterizations of the ferromagnetic properties of undoped and Cr-doped SnO_2 nanowires synthesized by chemical vapor deposition. All the samples exhibit room-temperature ferromagnetism. Our experiments reveal that, in addition to the contribution of surface oxygen vacancies, Cr doping into SnO_2 plays an important role in tuning the ferromagnetism of SnO_2 nanostructures. Doping the SnO_2 nanowires with 1.8at.% Cr enhances the magnetization by 28%. We applied the bound magnetic polaron model to successfully explain the enhancement of ferromagnetism.
机译:我们介绍了化学气相沉积合成的未掺杂和Cr掺杂的SnO_2纳米线的铁磁特性的详细表征。所有样品均表现出室温铁磁性。我们的实验表明,除了表面氧空位的贡献外,Cr掺杂到SnO_2中在调节SnO_2纳米结构的铁磁性方面也起着重要作用。用1.8at。%的Cr掺杂SnO_2纳米线可将磁化强度提高28%。我们应用束缚的磁极化子模型成功地解释了铁磁性的增强。

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