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The nonliner in MEMS touch mode capacitive devices

机译:MEMS触摸模式电容设备中的非线性

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Capacitive touch MEMS devices have better performance and higher sensitivity than conventional capacitive MEMS device. Because the diaphragm of these capacitive MEMS device touches the substrate in the operation, it also can withstand large over distortion, thus it is very suitable for industrial applications. However, hysteresis has been observed on some devices, especially for high sensitivity devices, when the load is cycled. In fabrication experiments, it is found that the P+ diffused diaphragm is deformed after the Si-Si bonding and subsequent high temperature annealing. The fabricated P+ diaphragm of some Si-Si sensor buckles downward toward the substrate, with no applied distortion. From an analysis of fabrication processes and a finite element modeling study, it is suggested that the P+ diaphragm was deformed when no load is applied. When a positive load is applied, the diaphragm touches the substrate creating a “compression” stress in the touched section of the diaphragm and making this part of the diaphragm raised. The hysteresis observed is the result of this unstable diaphragm. This hypothesis can be used to calculate the size of hysteresis and explain some of the observed experimental results.
机译:电容式触摸MEMS器件比常规电容式MEMS器件具有更好的性能和更高的灵敏度。由于这些电容式MEMS器件的膜片在操作中会接触到基板,因此它还可以承受较大的过失真,因此非常适合工业应用。但是,当负载循环时,在某些设备上观察到了磁滞现象,尤其是对于高灵敏度的设备。在制造实验中,发现在Si-Si键合和随后的高温退火之后,P +扩散膜片变形。某些Si-Si传感器制造的P +膜片向下弯曲向基板,没有施加任何变形。通过对制造过程的分析和有限元建模研究,表明在不施加载荷的情况下P +膜片会变形。当施加正载荷时,隔膜会接触基材,从而在隔膜的接触部分产生“压缩”应力,并使隔膜的这一部分升高。观察到的磁滞是这种不稳定的膜片的结果。该假设可用于计算磁滞的大小并解释一些观察到的实验结果。

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