Abstract-Independent double gated transistors give better control of the channel and dynamic tradeoff between power and performance. An independent double gated (IDG) FlexFET transistor is simulated using the Silvaco Atlas tool and the results are then compared with the data obtained from experimental devices manufactured by American Semiconductor Inc. (ASI). A reasonable correlation between the simulations and the experimental devices is obtained, following careful calibration of the simulation parameters. The bottom gate control factor (f) (i.e. the ratio of the change in threshold voltage to the change in bottom gate voltage) is observed to be around 0.3. The simulator is calibrated to match the experimental results by changing several parameters.
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