Microstructure Evolution and Implications for Cu Nanointerconnects and Beyond

摘要

The continued scaling of Cu low k technology is facing serious challenges imposed by basic limits from materials, processing and reliability. This has generated great interests recently to further develop Cu nanointerconnects and alternates, particularly Co and Ru nanointerconnects beyond the 10nm node. The performance and reliability are important considerations for the development of nanointerconnects in addition to challenges from processing complexity and manufacturing cost. In this paper, we investigate the microstructure evolution in Cu, Co and Ru nanointerconnects and the effects on resistivity and electromigration (EM), two key factors contributing to the RC delay and reliability of the nanointerconnects.