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Tri-Layer Nanoindentation for Mechanical Characterization of Ultra-Low-K Dielectrics

机译:超低速仪电介质机械表征的三层纳米压痕

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Recently the mechanical properties of nano-porous ultra-low-k (ULK) dielectric thin films have been characterized by nanoindentation using a tri-layer sample configuration. Tetraethyl orthosilicate (TEOS) silica was coated on the fragile ULK thin film to protect it from direct contact with nanoindenter tip. In this paper, the finite element method (FEM) simulations are conducted to investigate the effect of TEOS thickness, and to propose rules to design the tri-layer sample.
机译:最近,纳米多孔超低k(ULK)介电薄膜的机械性能已经表征了使用三层样品构型的纳米indentation。涂覆在脆弱的ULK薄膜上的四乙基异硅酸盐(TEOS)二氧化硅,以保护其免受与纳米丁烯尖端的直接接触。本文进行了有限元方法(FEM)模拟以研究TEOS厚度的影响,并提出规则设计三层样品。

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