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Synthesis of cubic-GaN nanoparticles using the Na flux method: A novel use for the ultra-high pressure apparatus

机译:Na助熔剂法合成立方晶GaN纳米颗粒:超高压设备的新用途

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Nano-scale cubic-GaN particles were successfully synthesized using the Na flux method under about 500 atm with a belt-type ultra-high pressure apparatus. High pressure nitrogen gas of about 500 atm was sealed in the ultra-high pressure apparatus, which enabled the dissolution of pressurized nitrogen gas into a Ga-Na melt at 500°C without a compressor. In contrast, the conventional Na flux method is carried out under a pressure of 150 atm, the maximum pressure of a nitrogen gas cylinder. A characteristic feature of the process used herein is that the high-pressure reaction gas is dissolved into a flux within the ultra-high pressure apparatus. The c-GaN nanoparticles obtained by this method show excellent crystallinity and a low mixing ratio of hexagonal-GaN, and thus the method solves two common problems in the synthesis of c-GaN.
机译:使用约500atm的Na焊剂法成功地合成了纳米级立方GaN颗粒,具有带式超高压装置。在超高压装置中密封大约500个ATM的高压氮气,这使得将加压氮气在500℃下的Ga-Na熔体中溶解而没有压缩机。相反,传统的NA磁通方法在150atm的压力下进行,氮气筒的最大压力。这里使用的方法的特征是高压反应气体溶解到超高压装置内的磁通中。通过该方法获得的C-GaN纳米粒子显示出优异的结晶度和六边形 - GaN的低混合比,因此该方法解决了C-GaN的合成中的两个常见问题。

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