Design of X-band low-noise amplifier for optimum matching between noise and power

摘要

High Electron Mobility Transistors (HEMT) plays a crucial role in microwave low noise receivers. Low noise HEMTs are used extensively in the ultra low noise amplifier (LNAs). Design the LNA is difficult for the radio astronomical observations, especially the realization of the simultaneous about the noise matching and the power matching, as well as the full band unconditional stability. With the Agilent Advanced Design System (ADS) simulation tools, the X-band three-stage LNA using NEC-NE3210S01 HEMTs has been designed: Noise Figure<0.6dB; power Gain>30dB at X-band (7.8∼9.4GHz), full band unconditional stability.