Research on the photoelectric characteristics of a double barrier structure with quantum dots-quantum well inserted in central well

摘要

This paper studies the photoelectric characteristics of a double barrier structure with quantum dots (QD)-quantum well (QW) inserted in central well. It has been shown that the current response of this device is closely bound up with optical intensity and the temperature. Based on a professional simulation tool Crosslight APSYS, after analyzing the device's band diagram and its response of photonic memory effect in I-V characteristic (300k) and C-V characteristic(300k), it has been shown that the current response of this device is closely bound up with optical intensity and the illumination time. Based on a professional simulation tool Crosslight APSYS and the testing software Keithley, we can try to establish small-signal models of the device with the experimental datas in order to understand and apply.