Comparative analysis of trap-based program/erase behaviors with tunnel dielectric for SONOS flash memory

摘要

In this study, we comparatively analyze the trap-based memory operation characteristics with tunnel dielectric in Oxide-Nitride-Oxide (ONO) structure. Detailed analysis is focused on the difference between single and bandgap engineered (BE) tunnel dielectric by comparing the program/erase (P/E) and charge retention behaviors. As a result, bandgap engineered tunnel dielectric structure embodies both fast P/E speed and long-term charge retention characteristics which exhibit a possible solution for performance optimization in SONOS flash memory device.