The first principle computer simulation and real device characteristics of superlattice phase-change memory

摘要

This paper presents of atomically controlled Ge-Sb-Te films that enable a suppression of switching energy, and an increase in speed faster than that using the composite films in Set and Reset. The first principle computer simulations using NVT ensemble dynamics and real device fabrication based on the model were carried out. We found that the obtained experimental data are in good agreement with the simulation models, and succeeded in suppressing the Reset energy by less than 10%.