On the modelling of the C-V characteristics of semiconductor nanowire transistors

摘要

In this paper a novel approach to the twodi-mensional self-consistent solution of Schrödinger and Poisson equations is implemented to calculate the free electron concentration and capacitance-voltage characteristics in semiconductor quantum wire transistors. The Schrödinger equation is solved by the split operator method while a relaxation method was used to solve the nonlinear Poisson equation. The model is validated by comparison to previously published results and then applied as a tool to obtain the C-V relationship and the charge control model for a specific nanowire transistor.