Radiation effects on high-K dielectrics. Measurement technique and first results

机译：辐射对高K电介质的影响。测量技术和初步结果

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The radiation response of MOS capacitors with HfO2 as insulator was investigated. The development of instrumental for such goal is presented. First results and analysis are presented.

机译：研究了以HfO 2 为绝缘体的MOS电容器的辐射响应。提出了实现这一目标的工具。给出了初步结果和分析。

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《Proceedings of the Argentine School of Micro-Nanoelectronics Technology and Applications 2010》|2010年|p.66-70|共5页
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作者
Salomone L. Sambuco; Kasulin A.; Inza M. Garcia; Lipovetzky J.; Redin E.; Carbonetto S.; Campabadal F.; Faigon A.;
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正文语种
中图分类微电子学、集成电路（IC）;
关键词
High-K dielectrics; MOS; Radiation effects;

机译：高介电常数MOS辐射效应;

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4. Radiation effects on high-K dielectrics. Measurement technique and first results [C] . Salomone L. Sambuco, Kasulin A., Inza M. Garcia, Proceedings of the Argentine School of Micro-Nanoelectronics Technology and Applications 2010 . 2010

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Radiation effects on high-K dielectrics. Measurement technique and first results

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