Enhancement-mode GaN MIS-HEMTs for power supplies

摘要

In this paper, we present the current status of GaN-high electron mobility transistor (HEMT) for power-supply-applications. Advantages of GaN HEMT are summarized with discussing required characteristics applying for power supplies. Then, we introduce our Enhancement-mode (E-mode) GaN MIS-HEMT technology. We focused on realizing both normally-off operation and high current density with high breakdown voltage. Detailed results are discussed in this paper. In particular, we developed a unique device structure called triple layer cap structure. High current density with normally-off mode was successfully achieved, which is preferable for power-supply application. We also demonstrated high speed performance with low on-resistance.