Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN-GaN Triple Cap Layer and High- Gate Dielectrics

摘要

This letter presents details of high-performance enhancement-mode GaN MIS high-electron-mobility transistor (MIS-HEMT) devices. Devices with an n-GaN/i-AlN-GaN triple cap layer, a recessed-gate structure, and high- k gate dielectrics show high drain current and complete enhancement-mode operation. The maximum drain current and threshold voltage (V th) are 800 mA/mm and +3 V, respectively. These results indicate that a recessed AlGaN/GaN MIS-HEMT with the triple cap could be a promising new technology for future device applications.