4H-SiC bipolar junction transistors for UHF and L-band long-pulse radar applications

摘要

This paper reviews the current status of 4H-SiC RF npn bipolar junction transistors (BJT''s). Process developments including precise and uniform SiC etch and low resistance p-type ohmic contact formation on a two inch SiC wafer will be presented. The high temperature operation up to 500 °C and radiation hardness up to 1.6 Mrad, as well as RF performance promising for long-pulse UHF and L-band radar applications will be reported. Rationale and approaches to the further improvement to S-band will be discussed.