Device performance and yield — A new focus for ion implantation

摘要

Recent innovations in ion implantation technology that overcome scaling barriers at 32nm/22nm are reviewed. Some of the hardware improvements will be discussed, but the main focus will be on the process and device data that demonstrates their advantages. These innovations include a cryogenic implant capability that enables a significant reduction in implantation induced crystal damage, molecular implants that show device performance improvements and that use standard ion sources, and various approaches that improve implant performance, particularly when diffusion-less anneal is used.