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EUVL System - Moving Towards Production

机译:EUVL系统-迈向生产

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Single exposure lithography is the most cost effective means of achieving critical level exposures, and extreme ultraviolet lithography (EUVL) is the technology that will enable this for 27nm production and below. ASML is actively engaged in the development of a multi generation production EUVL system platform that builds on TWINSCAN™ technology and the designs and experience gained from the build, maintenance, and use of the Alpha Demo Tools (ADTs). The ADTs are full field step-and-scan exposure systems for EUVL and are being used at two research centers for EUVL process development by more than 10 of the major semiconductor chip makers, along with all major suppliers of masks and resist. In this paper, we will present our EUVL roadmap, and the manufacturing status of the projection lens for our first production system. Included will also be some test data on the new reticle pods. Experimental results from ADT showing the progress in imaging (28 nm half pitch 1:1 lines/spaces CDU ~10%), single machine overlay down to 3 nm, and resist complete the paper.
机译:单曝光光刻技术是实现临界水平曝光的最经济有效的方法,而极紫外光刻技术(EUVL)是使该技术能够用于27nm及以下生产的技术。 ASML积极从事基于TWINSCAN™技术以及从Alpha演示工具(ADT)的构建,维护和使用中获得的设计和经验的多代生产EUVL系统平台的开发。 ADT是用于EUVL的全场步进扫描曝光系统,已被两家10个主要半导体芯片制造商以及所有主要的掩模和抗蚀剂供应商用于EUVL工艺开发的两个研究中心。在本文中,我们将介绍我们的EUVL路线图以及第一个生产系统的投影镜头的制造状态。还将包括新标线盒上的一些测试数据。 ADT的实验结果表明成像进展(28 nm半节距1:1线/间距CDU〜10%),单机覆盖至3 nm并能完成整张纸。

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