Modeling of a multicharged ion beam line using SIMION

摘要

Multicharged ion beams (MCI) are promising tools to probe or modify the surface of materials with applications in microelectronics and nanotechnology. Ion beam lines are parts of the MCI systems connecting the ion source with the processing chamber and they perform the function of extracting, accelerating, decelerating, focusing and scanning the ion beam on the surface of the target. In our work we present results of modeling of an MCI beam line using the SIMION code to simulate the flight of ions, with the purpose of optimizing the yield of the line and avoiding spurious effects due to interaction of the ions with the metallic elements of the line, such as heating, outgassing and excessive X-ray emission. We show that a two stage ion extractor could significantly reduce ion beam losses.