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Plasma treatment of polydimethylsiloxane thin films studied by infrared reflection absorption spectroscopy

机译:红外反射吸收光谱法研究等离子体处理聚二甲基硅氧烷薄膜

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Plasma modification of polydimethylsiloxane (PDMS) thin films was studied by means of Fourier-Transform-Infrared-Reflection-Absorption-Spectroscopy. The spin-coated PDMS films (10 nm - 100 nm) were prepared on aluminium coated glass substrates, and their thickness was measured by spectroscopic ellipsometry. The direct plasma treatment is compared with the plasma radiation, only, in argon and hydrogen rf plasmas, respectively. Evolution of IR spectra was monitored, and the changes of PDMS characteristic absorption bands (absorbance, broadening, shifting) as well as the formation of new bands are discussed. In particular, the apperance of new band at 1230 cm~(-1) was observed, and it was identified as LO phonon band of SiO_x. For analysis of the Si-O-Si asymmetrical vibration band the deconvolution of this band was performed using Gaussian peaks.
机译:利用傅立叶变换红外反射吸收光谱法研究了聚二甲基硅氧烷(PDMS)薄膜的等离子体改性。在铝涂覆的玻璃基板上制备旋涂的PDMS膜(10 nm-100 nm),并通过光谱椭圆偏振法测量其厚度。仅将氩气和氢rf等离子体中的直接等离子体处理与等离子体辐射进行比较。监测了红外光谱的演变,并讨论了PDMS特征吸收带的变化(吸收,加宽,移动)以及新谱带的形成。尤其是在1230 cm〜(-1)处观察到新的能带出现,并被确定为SiO_x的LO声子能带。为了分析Si-O-Si不对称振动带,使用高斯峰对该带进行了反卷积。

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