Study on preparation and electrical properties of Mo-doped vanadium oxide thin films by organic sol-gel

摘要

An organic sol-gel method of preparing Mo-doped vanadium oxide thin films was described. Vanadium oxide powder and molybdenum trioxide powder were dissolved into a mixed solution of benzyl alcohol and isobutyl alcohol to obtain avanadium solution, which was then spin-coated on glass substrates followed by an anneal at 500°C. Square resistancewas measured by the four-point probe, and film thickness was measured by the effects of molar ratio. The effects of doping concentration and film thickness on the electronic properties of vanadium oxide thin film, and film uniformity aswell as stability are studied. Results show that the TCR (30°C) of VO_2 films was increased greatly, and the square resistance was reduced by Mo-doped.